RCDD · Question #110
The recommended MAXIMUM value for the bonding resistance between the nearest available grounding electrode and the busbar in an entrance facility (EF) is ________ ohms.
The correct answer is A. 0.1. The maximum recommended bonding resistance between the nearest grounding electrode and the entrance facility busbar is 0.1 ohms, ensuring low-impedance fault and surge current paths.
Question
The recommended MAXIMUM value for the bonding resistance between the nearest available grounding electrode and the busbar in an entrance facility (EF) is ________ ohms.
Options
- A0.1
- B0.5
- C1
- D2
- E5
How the community answered
(33 responses)- A85% (28)
- B3% (1)
- C3% (1)
- D9% (3)
Why each option
The maximum recommended bonding resistance between the nearest grounding electrode and the entrance facility busbar is 0.1 ohms, ensuring low-impedance fault and surge current paths.
Per ANSI/TIA-607-C and BICSI grounding standards, the bonding resistance at an entrance facility must not exceed 0.1 ohms to guarantee effective dissipation of fault and surge currents. This low threshold ensures that potential differences between bonded conductors remain negligible, protecting both equipment and personnel. Values above this indicate a degraded or improperly installed bonding connection.
0.5 ohms exceeds the 0.1-ohm maximum and would not provide the low-impedance path required for reliable bonding in an entrance facility.
1 ohm is ten times the maximum threshold and represents an inadequate bonding connection that could allow dangerous potential differences.
2 ohms is far above the acceptable limit and would be considered a failed bonding installation.
5 ohms greatly exceeds the standard and would provide virtually no effective bonding protection.
Concept tested: Maximum bonding resistance in entrance facility grounding
Source: https://www.tiaonline.org/standard/tia-607/
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